epitaxy's Usage Examples:

Metalorganic vapour-phase epitaxy (MOVPE), also known as organometallic vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD).

Molecular-beam epitaxy (MBE) is an epitaxy method for thin-film deposition of single crystals.

These flights proved the vacuum wake concept, and realized the space epitaxy concept by growing the first-ever crystalline semiconductor thin films.

He is known as the "father of molecular beam epitaxy"; a technique he developed at that facility in the late 1960s.

of epiwafers manufactured by metalorganic vapour phase epitaxy (MOCVD), molecular beam epitaxy (MBE) and chemical vapor deposition (CVD).

high-brightness LEDs used a thin film of GaN deposited via metalorganic vapour-phase epitaxy (MOVPE) on sapphire.

Chemical beam epitaxy (CBE) forms an important class of deposition techniques for semiconductor layer systems, especially III-V semiconductor systems.

ASM’s technologies include atomic layer deposition, epitaxy, chemical vapor deposition and diffusion.

Molecular beam epitaxy, the Langmuir–Blodgett method, atomic layer deposition and molecular layer.

Atomic layer epitaxy (ALE), more generally known as atomic layer deposition (ALD), is a specialized form of thin film growth (epitaxy) that typically deposit.

Hydride vapour phase epitaxy (HVPE) is an epitaxial growth technique often employed to produce semiconductors such as GaN, GaAs, InP and their related.

noodles commonly used in Southeast Asia Migration enhanced epitaxy, a refined molecular-beam epitaxy technique Multi Effect Evaporator Ministry of Ecology.

on molecular-beam epitaxy (MBE), which is now an annual conference known as NAMBE (North American Conference on Molecular Beam Epitaxy).

Previous fabrication methods relied on expensive molecular beam epitaxy processes, but colloidal synthesis allows for cheaper manufacture.

known as a pioneer of molecular beam epitaxy.

Cho, Arthur pioneered molecular beam epitaxy at Bell Laboratories, where he published.

Selective area epitaxy is the local growth of epitaxial layer through a patterned amorphous dielectric mask (typically SiO2 or Si3N4) deposited on a semiconductor.

zinc blende and wurtzite structures can be prepared by molecular beam epitaxy.

TEGa, is a metalorganic source of gallium for metalorganic vapour phase epitaxy (MOVPE) of compound semiconductors.

Soitec has epitaxy expertise in III-IV materials across the following fields: molecular beam epitaxy, metal organic vapor phase epitaxy deposition and.

Synonyms:

growing;

Antonyms:

palingenesis; nondevelopment;