epitaxial's Usage Examples:

deposited crystalline film is called an epitaxial film or epitaxial layer.

The relative orientation(s) of the epitaxial layer to the crystalline substrate.

The FREDFET (fast-reverse or fast-recovery epitaxial diode FET) is a specialized FET designed to provide a very fast recovery.

In epitaxial growth, the lattice constant is a measure of the structural compatibility.

semiconductor company founded 1988 in Cardiff, Wales, which manufactures advanced epitaxial wafers for a wide range of technology applications for wireless, optoelectronic.

LAO is sometimes used as an epitaxial insulator between two conductive layers.

An epitaxial wafer (also called epi wafer, epi-wafer, or epiwafer) is a wafer of semiconducting material made by epitaxial growth (epitaxy) for use in.

is a type of power MOSFET that uses P+ columns that penetrate the N- epitaxial layer.

The resulting vacuum was used to study epitaxial film growth.

Hydride vapour phase epitaxy (HVPE) is an epitaxial growth technique often employed to produce semiconductors such as GaN, GaAs, InP and their related.

Micropipes and screw dislocations in epitaxial layers are normally derived from the substrates on which the epitaxy is.

by RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mid-1970s.

of epitaxial wafers may be textured to enhance light absorption.

In June 2015, it was reported that heterojunction solar cells grown epitaxially on n-type.

"Direct conversion of h-BN into c-BN and formation of epitaxial c-BN/diamond heterostructures".

These transistors are often fabricated on p/p+ silicon epitaxial layers.

approaches of cleaving multi-layer graphite into single layers or growing it epitaxially by depositing a layer of carbon onto another material have been supplemented.

Silicon on sapphire (SOS) is a hetero-epitaxial process for metal-oxide-semiconductor (MOS) integrated circuit (IC) manufacturing that consists of a thin.

GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide.

The crystals are frequently epitaxial overgrowths of natrolite, mesolite, and gonnardite in various orders.